PolarHV TM HiPerFET
IXFC 30N60P
V DSS = 600 V
Power MOSFET
I D25
IXFR 30N60P
Electrically Isolated Back Surface
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
= 15 A
R DS(on) ≤ 250 m Ω
t rr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
ISOPLUS220 TM (IXFC)
V DSS
V DGR
V GSS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M Ω
Continuous
600
600
± 30
V
V
V
E153432
V GSM
I D25
Transient
T C = 25 ° C
± 40
15
V
A
G
D
S
Isolated back surface
I DM
T C = 25 ° C, pulse width limited by T JM
80
A
I AR
E AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
30
50
1.5
10
A
mJ
J
V/ns
ISOPLUS247 TM (IXFR)
E153432
T J ≤ 150 ° C, R G = 3 Ω
P D
T C = 25 ° C
166
W
Isolated back surface
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
G = Gate
S = Source
D = Drain
T L
V ISOL
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, t = 1minute, leads-to-tab
300
2500
° C
V~
Features
Silicon chip on Direct-Copper-Bond
substrate
F C
Weight
Mounting Force
ISOPLUS220
ISOPLUS247
(IXFC)
(IXFR)
11..65 / 2.5..15
20..120 / 4.5..25
2
5
N/lb
N/lb
g
g
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Applications
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
DC-DC converters
Battery chargers
BV DSS
V GS = 0 V, I D = 250 μ A
600
V
Switched-mode and resonant-mode
power supplies
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 4 mA
V GS = ± 30 V, V DS = 0
V DS = V DSS
V GS = 0 V
T J = 125 ° C
3.0
5.0
± 100
25
500
V
nA
μ A
μ A
DC choppers
AC motor control
Advantages
Easy assembly
R DS(on)
V GS = 10 V, I D = 15 A
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
250
m Ω
Space savings
High power density
? 2006 IXYS All rights reserved
DS99341E(03/06)
相关PDF资料
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